N - CHANNEL 500V - 0.33 Ω - 14A - TO-247
PowerMESH MOSFET
TYPICAL RDS(on)= 0.33 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
Linh kiện điện tử VAN BÁN DẪN MOS FET
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