N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP
MESH OVERLAY MOSFET
TYPICAL RDS(on)= 0.150Ω
EXTREMELY HIGH dV/dt CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.