Power supply voltage
VDD = 2.3 V~3.6 V
Operating temperature
Ta = −40°C~85°C
Organization
8M × 8 bits/4M × 16 bits
Functions
Simultaneous Read/Write
Page Read
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
Block erase architecture
8 × 8 Kbytes/127 × 64 Kbytes
Boot block architecture
TC58FVM6T2A: top boot block
TC58FVM6B2A: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
105 cycles typ.
Access Time (Random/Page)
| VDD |
CL = 30 pF |
CL = 100 pF |
| 2.7~3.6 V |
65 ns/25 ns |
70 ns/30 ns |
| 2.3~3.6 V |
70 ns/30 ns |
75 ns/35 ns |
Power consumption
10 ìA (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
11 mA (Address Increment Read operation)
5 mA (Page Read operation)
Package
TC58FVM6**AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVM6**AXB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
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