Type Designator: G7N60C3D
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 60W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2V
Maximum gate-emitter voltage |Ueg|, V: 20V
Maximum collector current |Ic|, A: 14A
Maximum junction temperature (Tj), °C: 150
Rise time, nS: 8.5
Maximum collector capacity (Cc), pF:
Package: TO220AB
Linh kiện điện tử VAN BÁN DẪN IGBT
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