TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Strobe Flash Applications
Medium Power Amplifier Applications
Excellent hFE linearity
: hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
: hFE (2) = 70 (min) (V CE = −2 V, IC = −4 A)
Low collector saturation voltage
: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A)
High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Linh kiện điện tử VAN BÁN DẪN BJT transistor
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