TOSHIBA Transistor Silicon PNP Epit axial Type (PCT process)
• High voltage and high current: VCEO = − 50 V, IC = − 150 mA (max)
• Excellent hFE linearity: h FE (IC = − 0.1 mA)/hFE (IC = − 2 mA)
= 0.95 (typ.)
• High hFE: h FE = 70~400
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC2712
• Small package
Linh kiện điện tử VAN BÁN DẪN BJT transistor
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